Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-04
2006-07-04
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S381000
Reexamination Certificate
active
07071052
ABSTRACT:
A resistor100is formed in a semiconductor layer106, e.g., a silicon layer on an SOI substrate. A body region108is formed in a portion of the semiconductor layer106and is doped to a first conductivity type (e.g., n-type or p-type). A first contact region110, which is also doped to the first conductivity type, is formed in the semiconductor layer106adjacent the body region108. A second contact region112is also formed in the semiconductor layer106and is spaced from the first contact region110by the body region108. A dielectric layer116overlies the body region and is formed from a material with a relative permittivity greater than about 8. An electrode114overlies the dielectric116.
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Hu Chenming
Yeo Yee-Chia
Kennedy Jennifer
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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