Resistance to gate dielectric breakdown at the edges of shallow

Details Resistance to gate dielectric breakdown at the edges of shallow Resistance to gate dielectric breakdown at the edges of shallow

1997-09-12

1999-07-27

Booth, Richard A

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438424, 438520, 438296, 438770, 438766, 438981, H01L 218242, H01L 2176, H01L 21265, H01L 2131, H01L 21469

Patent

active

059306203

ABSTRACT:
A semiconductor process in which at least one isolation structure is formed in a semiconductor substrate. An oxygen bearing species is introduced into portions of the semiconductor substrate proximal to the isolation structure. A gate dielectric layer is then formed on an upper surface of the semiconductor substrate. The presence of the oxygen bearing species in the proximal portions of the semiconductor substrate increases the oxidation rate of the portions relative to the oxidation rate of portions of the substrate that are distal to the isolation structures. In this manner, the first thickness of the gate dielectric over the proximal portions of the semiconductor substrate is greater than a second thickness of the gate oxide layer over remaining portions of the semiconductor substrate. The increased oxide thickness adjacent to the discontinuities of the isolation trench reduces the electric field across the oxide.

REFERENCES:
patent: 5100823 (1992-03-01), Yamada
patent: 5183775 (1993-02-01), Levy
Wolf et al., Silicon Processing For The VLSI ERA, vol. 1: Process Technology, 1986 Lattice Press, p. 183.
Sze, S.M., Semiconductor Devices Physics and Technology, John Wiley & Sons, pp. 362-363, 1985.

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