Resin seal semiconductor package

Details Resin seal semiconductor package Resin seal semiconductor package

1994-02-17

1997-08-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

257780, 257787, H01L 2348

Patent

active

056568630

ABSTRACT:
Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a periphery of the base metal layer is formed on the insulating layer. Connection layers are formed on the base metal layers. First conductors are formed on the connection layers. A seal resin exposing only top surfaces of the first conductors is formed. Lumpish second conductors are formed on the top surfaces of the first conductor. Thereby, a resin seal semiconductor package can be made compact and it has improved electrical characteristics and high reliability.

REFERENCES:
patent: 4472730 (1984-09-01), Ohta
patent: 5128746 (1992-07-01), Pennisi et al.
patent: 5321303 (1994-06-01), Kawahara et al.
patent: 5327013 (1994-07-01), Moore et al.
patent: 5331235 (1994-07-01), Chun
patent: 5373190 (1994-12-01), Ichiyama
Fujitsu Semiconductor Device Data Book (1992).
Takashi Inoue et al., "Micro Carrier for LSI Chip Used in the Hitac M-880 Processor Group" IEEE (1991).
Davidson et al., "The Design of ES/9000 Module" IEEE (1991).

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