Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-24
2007-04-24
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S230000, C438S303000, C438S595000, C257S204000, C257S412000, C257SE21626, C257SE21632, C257SE21640
Reexamination Certificate
active
10809853
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a polysilicon layer on a dielectric layer, which is formed on a substrate. The polysilicon layer is etched to generate a patterned polysilicon layer with an upper surface that is wider than its lower surface. The method may be applied, when using a replacement gate process to make transistors that have metal gate electrodes.
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Barns Chris E.
Brask Justin K.
Chau Robert S.
Doczy Mark L.
Kavalieros Jack
Chambliss Alonzo
Intel Corporation
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