Repairing method for low-k dielectric materials

Details Repairing method for low-k dielectric materials Repairing method for low-k dielectric materials

2008-01-01

2008-01-01

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21577, C257SE21585, C438S675000

Reexamination Certificate

active

07314828

ABSTRACT:
A method of forming a low-k dielectric layer and forming a structure in the low-k dielectric layer includes depositing a low-k dielectric layer over a substrate, performing a first treatment to the low-k dielectric layer, performing post-formation processes, and performing a second treatment to the low-k dielectric layer. The k value of the low-k dielectric layer is lowered by the first treatment. The post-formation processes performed to the low-k dielectric layer include at least one low-k dielectric material damaging process. The second treatment restores the low-k dielectric layer. Preferably, each of the first and second treatments includes a curing process selected from e-beam curing, ultraviolet curing, plasma curing, SCCO2cleaning, and combinations thereof.

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