Removal of post-RIE polymer on Al/Cu metal line

Details Removal of post-RIE polymer on Al/Cu metal line Removal of post-RIE polymer on Al/Cu metal line

1998-04-16

1999-11-09

Gupta, Yogendra

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

438906, 438706, 134 31, 252 793, C03C 2506, C23F 112

Patent

active

059807709

ABSTRACT:
A method for removal of post reactive ion etch sidewall polymer rails on a Al/Cu metal line of a semiconductor or microelectronic composite structure comprising:
1) supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber in which said composite structure is supported to form a water soluble material of sidewall polymer rails left behind on the Al/Cu metal line from the RIE process; removing the water soluble material with deionized water; and removing photo-resist from said composite structure by either a water-only plasma process or a chemical down stream etching method; or
2) forming a water-only plasma process to strip the photo-resist layer of a semiconductor or microelectronic composite structure previously subjected to a RIE process;
supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber on which said structure is supported to form a water soluble material of saidwall polymer rails left behind on the Al/Cu metal line from the RIE process; and
removing the water soluble material with deionized water.

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