Reliable low resistance strap for trench storage DRAM cell using

Details Reliable low resistance strap for trench storage DRAM cell using Reliable low resistance strap for trench storage DRAM cell using

1996-10-22

1999-07-13

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438246, 438388, 438389, H01L 218242

Patent

active

059239719

ABSTRACT:
Strap resistance, surface strap shorts and wordline capacitance can be reduced by providing a selectively grown silicon strap which tapers away from spacer nitride and has less contact with spacer nitride. In addition the strap is optionally doped with an arsenic implant which reduces resistance.

REFERENCES:
patent: 4801988 (1989-01-01), Kenney
patent: 5185294 (1993-02-01), Lam et al.
patent: 5250829 (1993-10-01), Bronner et al.
patent: 5264716 (1993-11-01), Kenney
patent: 5348905 (1994-09-01), Kenney
patent: 5362663 (1994-11-01), Bronner et al.
patent: 5369049 (1994-11-01), Acocella et al.
patent: 5384277 (1995-01-01), Hsu et al.
patent: 5384474 (1995-01-01), Park et al.
patent: 5389559 (1995-02-01), Hsieh et al.
patent: 5395786 (1995-03-01), Hsu et al.
patent: 5422294 (1995-06-01), Noble, Jr.
patent: 5521115 (1996-05-01), Park et al.

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