Reliable low-k interconnect structure with hybrid dielectric

Details Reliable low-k interconnect structure with hybrid dielectric Reliable low-k interconnect structure with hybrid dielectric

2006-11-14

2006-11-14

Baumeister, Bradley (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S778000, C438S780000, C438S782000, C438S631000, C257SE21257, C257SE21259, C257SE21261

Reexamination Certificate

active

07135398

ABSTRACT:
An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.

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