Reliability barrier integration for Cu application

Details Reliability barrier integration for Cu application Reliability barrier integration for Cu application

2006-04-11

2006-04-11

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S643000, C438S648000

Reexamination Certificate

active

07026238

ABSTRACT:
Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

REFERENCES:
patent: 3607384 (1971-09-01), Banks
patent: 4169032 (1979-09-01), Haase et al.
patent: 4364099 (1982-12-01), Koyama et al.
patent: 4491509 (1985-01-01), Krause
patent: 4760369 (1988-07-01), Tiku
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5910880 (1999-06-01), DeBoer et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5972178 (1999-10-01), Narasimhan et al.
patent: 5972179 (1999-10-01), Chittipeddi et al.
patent: 5985762 (1999-11-01), Geffken et al.
patent: 5989999 (1999-11-01), Levine et al.
patent: 6002174 (1999-12-01), Akram et al.
patent: 6007684 (1999-12-01), Fu et al.
patent: 6013576 (2000-01-01), Oh et al.
patent: 6028003 (2000-02-01), Frisa et al.
patent: 0 818 817 (1998-01-01), None
patent: 05-179437 (1993-07-01), None
patent: 09-186157 (1997-07-01), None
patent: WO 98/52219 (1998-11-01), None
patent: WO 98/54377 (1998-12-01), None
patent: WO 00/38225 (2000-06-01), None
patent: WO 00/41235 (2000-07-01), None
K. Min et al., “Comparative Study of Tantalum and Tantalum Nitride as a Diffusion Barrier for CU Metallization” J. Vac. Sc. Technol. B 14(5), Sep./Oct. 1996, p 1-7.
International Search Report for PCT/US01/26751, dated May 27, 2002.
International Search Report for PCT/US01/24880, dated May 17, 2002.
International Search Report for PCT/US98/09751, dated Sep. 16, 1998.

Affiliated with

Also associated with

Rating

Reliability barrier integration for Cu application does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reliability barrier integration for Cu application, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reliability barrier integration for Cu application will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3557107