Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE27087
Reexamination Certificate
active
07915116
ABSTRACT:
According to one aspect of the invention, a memory device is disclosed. The memory device comprises a substantially linear active area comprising a source and at least two drains defining a first axis. The memory device further comprises at least two substantially parallel word lines, at least a portion of a first word line located between a first drain and the source, and at least a portion of a second word line located between a second drain and the source, which word lines define a second axis. The memory device further comprises a digit line coupled to the source, wherein the digit line forms a substantially zig-zag pattern.
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Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Movva Amar
Smith Bradley K
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