Reflection mask

X-ray or gamma ray systems or devices – Specific application – Lithography

Patent

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Details

378 85, 430 5, G21K 500

Patent

active

052727440

ABSTRACT:
In a reflection mask, there is formed at least one laminate structure comprising a high reflectivity portion, a middle portion and a high reflectivity portion. When there is a defect in the high reflectivity portion as the top layer, this high reflectivity portion and the underlying middle portion are removed in that defective position, thereby allowing the high reflectivity portion as the bottom layer to be exposed to repair the defect.

REFERENCES:
patent: 4411013 (1983-10-01), Takasu et al.
patent: 4891830 (1990-01-01), Iwahashi
patent: 5052033 (1991-09-01), Ikeda et al.

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