Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-08-19
1998-09-22
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438905, 134 11, 134 4, 216 67, H01L 2100
Patent
active
058113568
ABSTRACT:
The present invention provides a method and apparatus for reducing the concentration of mobile ion and metal contaminants in a processing chamber by increasing the bias RF power density to greater than 0.051 W/mm.sup.2 and increasing the season time to greater than 30 seconds, during a chamber seasoning step. The method of performing a season step in a chamber by depositing a deposition material under the combined conditions of a bias RF power density of about 0.095 W/mm.sup.2 and a season time of from about 50 to about 70 seconds, reduces the mobile ion and metal contaminant concentrations within the chamber by about one order of magnitude.
REFERENCES:
patent: 4795880 (1989-01-01), Hayes et al.
patent: 5041311 (1991-08-01), Tsukune et al.
patent: 5514246 (1996-05-01), Blalock
patent: 5589041 (1996-12-01), Lantsman
patent: 5599396 (1997-02-01), Sandhu
Murugesh Laxman
Narwankar Pravin
Rossman Kent
Sahin Turgut
Alejandro Luz
Applied Materials Inc.
Breneman R. Bruce
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