Reducing resistance in source and drain regions of FinFETs

Details Reducing resistance in source and drain regions of FinFETs Reducing resistance in source and drain regions of FinFETs

2011-05-10

2011-05-10

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000

Reexamination Certificate

active

07939889

ABSTRACT:
A semiconductor structure includes a semiconductor fin on a top surface of a substrate, wherein the semiconductor fin includes a middle section having a first width; and a first and a second end section connected to opposite ends of the middle section, wherein the first and the second end sections each comprises at least a top portion having a second width greater than the first width. The semiconductor structure further includes a gate dielectric layer on a top surface and sidewalls of the middle section of the semiconductor fin; and a gate electrode on the gate dielectric layer.

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