Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2011-07-12
2011-07-12
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S433000, C438S434000, C438S449000, C257S506000, C257S520000, C257S649000, C257SE29020
Reexamination Certificate
active
07977202
ABSTRACT:
A method of forming an integrated circuit structure includes providing a semiconductor substrate; and forming a first and a second MOS device. The first MOS device includes a first active region in the semiconductor substrate; and a first gate over the first active region. The second MOS device includes a second active region in the semiconductor substrate; and a second gate over the second active region. The method further include forming a dielectric region between the first and the second active regions, wherein the dielectric region has an inherent stress; and implanting the dielectric region to form a stress-released region in the dielectric region, wherein source and drain regions of the first and the second MOS devices are not implanted during the step of implanting.
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Chuang Harry
Liang Mong-Song
Thei Kong-Beng
Ho Tu-Tu V
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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