Reducing damage to ulk dielectric during cross-linked...

Details Reducing damage to ulk dielectric during cross-linked... Reducing damage to ulk dielectric during cross-linked...

2007-08-07

2007-08-07

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S424000, C438S622000

Reexamination Certificate

active

11164290

ABSTRACT:
Methods are disclosed for reducing damage to an ultra-low dielectric constant (ULK) dielectric during removal of a planarizing layer such as a crosslinked polymer. The methods at least partially fill an opening with an at most lightly crosslinked polymer, followed by the planarizing layer. When the at most lightly crosslinked polymer and planarizing layer are removed, the at most lightly crosslinked polymer removal is easier than removal of the planarizing layer, i.e., crosslinked polymer, and does not damage the surrounding dielectric compared to removal chemistries used for the crosslinked polymer.

REFERENCES:
patent: 5585673 (1996-12-01), Joshi et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6140226 (2000-10-01), Grill
patent: 6303505 (2001-10-01), Ngo et al.
patent: 6319819 (2001-11-01), Besser et al.
patent: 6323554 (2001-11-01), Joshi et al.
patent: 6329118 (2001-12-01), Hussein et al.
patent: 6342733 (2002-01-01), Hu et al.
patent: 6365529 (2002-04-01), Hussein et al.
patent: 6383925 (2002-05-01), Ngo et al.
patent: 6429128 (2002-08-01), Besser et al.
patent: 6506677 (2003-01-01), Avanzino et al.
patent: 6764951 (2004-07-01), van Ngo
patent: 6797652 (2004-09-01), Ngo et al.
patent: 6818557 (2004-11-01), Ngo et al.
patent: 2003/0134499 (2003-07-01), Chen et al.
patent: 2004/0152278 (2004-08-01), Farrar
patent: 2004/0266201 (2004-12-01), Wille et al.
Hussein, M. et al., “A Novel Approach to Dual Damascene Patterning,” Intel Corporation, Portland Technology Development. 3 pages, 2002.
Goldblatt, R.D. et al., “A High Performance 0.13 μm Copper BEOL Technology with Low-k Dielectric,” Proceedings of the IEEE 2000 International Interconnect Technology Conference, pp. 261-263, 2000.

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