Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-04-28
1997-04-15
Rosasco, S.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
430 5, 216 12, C23C 1400, C23C 1432
Patent
active
056205732
ABSTRACT:
X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low and uniform stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited. The stress gradients in the film are further reduced by transferring heat from the membrane as the metal is deposited thereon.
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patent: 5382340 (1995-01-01), Kola et al.
patent: 5480529 (1996-01-01), Kola et al.
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Jurgensen, C.W., Kola, R.R., Novembre, A.E., Tai, W.W., Frackoviak, J., Trimble, L.E., Celler, G.K., "Tungsten Patterning for 1:1 X-Ray Masks", J. Vac. Sci. Technol. B 9 (6), pp. 3280-3286 (Nov./Dec. 191).
Jurgensen Charles W.
Kola Ratnaji R.
Miller Gabriel L.
Smith Henry I.
Wagner Eric R.
Botos Richard J.
Lucent Technologies - Inc.
Rosasco S.
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