Reduced cap layer erosion for borderless contacts

Details Reduced cap layer erosion for borderless contacts Reduced cap layer erosion for borderless contacts

2005-05-10

2005-05-10

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000

Reexamination Certificate

active

06890815

ABSTRACT:
A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes for the various material layers of the semiconductor device while forming the borderless contacts.

REFERENCES:
patent: 6339241 (2002-01-01), Mandelman et al.
patent: 6660581 (2003-12-01), Yang et al.
patent: 6727541 (2004-04-01), Nishikawa

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