Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-14
2007-08-14
Coleman, William David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S087000, C438S455000, C438S481000, C257SE21568
Reexamination Certificate
active
11075273
ABSTRACT:
The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.
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Akatsu Takeshi
Aulnette Cécile
Ghyselen Bruno
Le Vaillant Yves Mathieu
Osternaud Bénédite
Coleman William David
Kim Su C.
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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