Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-06
2007-02-06
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S289000, C438S290000, C438S299000, C438S300000, C438S301000, C438S303000, C438S305000, C438S306000, C438S307000, C438S485000, C438S486000, C438S514000, C438S518000, C438S519000, C438S521000, C438S523000, C438S524000, C438S527000, C438S529000, C438S533000, C438S570000, C438S571000, C438S576000, C438S581000, C438S585000, C438S586000, C438S589000, C438S590000, C438S592000, C438S595000, C438S597000, C438S604000, C438S607000, C438S674000, C438S682000, C438S683000, C438S685000, C257SE21428, C257SE21419
Reexamination Certificate
active
10864952
ABSTRACT:
A method of forming a channel region for a MOSFET device in a strained silicon layer via employment of adjacent and surrounding silicon-germanium shapes, has been developed. The method features simultaneous formation of recesses in a top portion of a conductive gate structure and in portions of the semiconductor substrate not occupied by the gate structure or by dummy spacers located on the sides of the conductive gate structure. The selectively defined recesses will be used to subsequently accommodate silicon-germanium shapes, with the silicon-germanium shapes located in the recesses in the semiconductor substrate inducing the desired strained channel region. The recessing of the conductive gate structure and of semiconductor substrate portions reduces the risk of silicon-germanium bridging across the surface of sidewall spacers during epitaxial growth of the alloy layer, thus reducing the risk of gate to substrate leakage or shorts.
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Chan Bow-Wen
Huang Yi-Chun
Ko Chih-Hsin
Lin Chun-Chieh
Perng Baw-Ching
Ahmadi Mohsen
Haynes and Boone LLP
Lebentritt Michael
Taiwan Semiconductor Manufacturing Company , Ltd.
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