Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-13
2009-08-11
Andújar, Leonardo (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S057000, C257S291000, C257S249000, C257S222000
Reexamination Certificate
active
07572701
ABSTRACT:
A novel CMOS image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate having an upper surface, a gate comprising a dielectric layer formed on the substrate and a gate conductor formed on the gate dielectric layer, a collection well layer of a first conductivity type formed below a surface of the substrate adjacent a first side of the gate conductor, a pinning layer of a second conductivity type formed atop the collection well at the substrate surface, and a diffusion region of a first conductivity type formed adjacent a second side of the gate conductor, the gate conductor forming a channel region between the collection well layer and the diffusion region. A portion of the bottom of the gate conductor is recessed below the surface of the substrate. Preferably, a portion of the gate conductor is recessed at or below a bottom surface of the pinning layer to a depth such that the collection well intersects the channel region thereby eliminating any potential barrier interference caused by the pinning layer.
REFERENCES:
patent: 4173765 (1979-11-01), Heald et al.
patent: 4296469 (1981-10-01), Gunter et al.
patent: 4760273 (1988-07-01), Kimata
patent: 4814839 (1989-03-01), Nishizawa et al.
patent: 5412227 (1995-05-01), Zommer
patent: 5503017 (1996-04-01), Mizukoshi
patent: 5633520 (1997-05-01), Wu et al.
patent: 5811336 (1998-09-01), Kasai
patent: 6027955 (2000-02-01), Lee et al.
patent: 6127697 (2000-10-01), Guidash
patent: 6278142 (2001-08-01), Hynecek
patent: 6303448 (2001-10-01), Chang et al.
patent: 6358800 (2002-03-01), Tseng
patent: 6465820 (2002-10-01), Fox
patent: 6500692 (2002-12-01), Rhodes
patent: 6531380 (2003-03-01), Li et al.
patent: 6660553 (2003-12-01), Kimura et al.
patent: 6713796 (2004-03-01), Fox
patent: 6744084 (2004-06-01), Fossum
patent: 6815297 (2004-11-01), Krivokapic et al.
patent: 6828609 (2004-12-01), Deboy et al.
patent: 6909126 (2005-06-01), Janesick
patent: 7187018 (2007-03-01), Mouli et al.
patent: 7205591 (2007-04-01), Adkisson et al.
patent: 7334211 (2008-02-01), Toros et al.
patent: 7378697 (2008-05-01), Rhodes
patent: 7387908 (2008-06-01), Patrick
patent: 7388241 (2008-06-01), Rhodes
patent: 2001/0011736 (2001-08-01), Dierickx
patent: 2002/0088991 (2002-07-01), Hisamoto
patent: 2003/0075719 (2003-04-01), Sriram
patent: 2003/0089929 (2003-05-01), Rhodes
patent: 2003/0107066 (2003-06-01), Stevenson et al.
patent: 2003/0205741 (2003-11-01), Rhodes
patent: 2004/0000688 (2004-01-01), Harari et al.
patent: 2004/0132256 (2004-07-01), Kim et al.
patent: 2004/0195592 (2004-10-01), Fossum
patent: 2004/0195600 (2004-10-01), Rhodes
patent: 2004/0211987 (2004-10-01), Chien et al.
patent: 2004/0232497 (2004-11-01), Akiyama et al.
patent: 2004/0262609 (2004-12-01), Mouli et al.
patent: 2005/0023553 (2005-02-01), Rhodes
patent: 2005/0042793 (2005-02-01), Mouli et al.
patent: 2005/0051702 (2005-03-01), Hong et al.
patent: 2005/0098806 (2005-05-01), Rhodes
patent: 2005/0230721 (2005-10-01), Patrick
patent: 2006/0001060 (2006-01-01), Rhodes
patent: 2006/0011919 (2006-01-01), Mouli
patent: 2006/0118835 (2006-06-01), Ellis-Monaghan et al.
patent: 2006/0124976 (2006-06-01), Adkisson et al.
patent: 2006/0170009 (2006-08-01), Kitano et al.
patent: 0 890 993 (2008-08-01), None
Eric C. Fox et al, SPIE, A High Speed Linear CCD Sensor with Pinned Photodiode Photosite for Low Lag and Low Noise Imaging, vol. 3301, p. 17(1998).
A.EI Gamel & Helmy Eltoukhy, CMOS Image Sensors, IEEE Circuits & Device Magazine, May/Jun. 2005, p. 6-20.
Bhatia, et al., “Elimination of Parasitic Currents in Transistor-Schottky Barrier Diode Circuit”, vol. 19, No. 7, Dec. 1976.
Adkisson James W.
Ellis-Monaghan John
Jaffe Mark D.
Lasky Jerome B.
Andújar Leonardo
Canale Anthony J.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Yushin Nikolay
LandOfFree
Recessed gate for a CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Recessed gate for a CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Recessed gate for a CMOS image sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4113700