Recessed gate electrode MOS transistors having a...

Details Recessed gate electrode MOS transistors having a... Recessed gate electrode MOS transistors having a...

2005-04-26

2005-04-26

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S245000, C438S270000, C438S386000, C438S387000, C438S689000, C438S700000, C438S701000, C438S713000

Reexamination Certificate

active

06884677

ABSTRACT:
A transistor can include an integrated circuit substrate including spaced apart isolation regions therein and an active region therebetween. A recess is formed in the active region and extends between the spaced apart isolation regions and has a bottom and opposing side wall ends that are defined by facing portions of the spaced apart isolation regions. An electrically insulating layer is formed on the bottom of the recess. A conductive material is formed in the recess on the electrically insulating layer to provide a gate electrode.

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