Recess gate transistor structure for use in semiconductor...

Details Recess gate transistor structure for use in semiconductor... Recess gate transistor structure for use in semiconductor...

2008-05-27

2008-05-27

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S259000, C438S589000, C438S270000, C438S271000, C257SE21429

Reexamination Certificate

active

07378312

ABSTRACT:
An inner spacer is formed in a sidewall of a gate in contact with a first active region that is electrically connected to an upper capacitor, thereby reducing a gate induced drain leakage (GIDL). A structure of a recess gate transistor includes a gate insulation layer, a gate electrode, a first gate spacer, a second gate spacer and source/drain regions. The gate insulation layer is formed within a recess. The gate electrode is surrounded by the gate insulation layer and is extended from within the recess. The first gate spacer is spaced with a predetermined distance horizontally with a portion of the gate insulation layer, being formed in a sidewall of the gate electrode. The second gate spacer is formed in another part of the sidewall of the gate electrode. The source/drain regions are formed mutually oppositely on first and second active regions with the gate electrode therebetween.

REFERENCES:
patent: 6251730 (2001-06-01), Luo
patent: 6391720 (2002-05-01), Sneelal et al.
patent: 6498071 (2002-12-01), Hijzen et al.
patent: 6521498 (2003-02-01), Zandt In't et al.
patent: 6939751 (2005-09-01), Zhu et al.
patent: 7009257 (2006-03-01), Kim et al.
patent: 7012014 (2006-03-01), Lin et al.
patent: 7253473 (2007-08-01), Nakamura et al.
patent: 2002/0196651 (2002-12-01), Weis
patent: 2003/0062568 (2003-04-01), Beintner
patent: 2005/0020086 (2005-01-01), Kim et al.
patent: 2005/0167763 (2005-08-01), Kuan et al.
patent: 2005/0218458 (2005-10-01), Kim et al.
patent: 2006/0220145 (2006-10-01), Cho

Affiliated with

Also associated with

Rating

Recess gate transistor structure for use in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Recess gate transistor structure for use in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Recess gate transistor structure for use in semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2815908