Rare earth metal oxide memory element based on charge...

Details Rare earth metal oxide memory element based on charge... Rare earth metal oxide memory element based on charge...

2006-07-18

2006-07-18

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000

Reexamination Certificate

active

07078301

ABSTRACT:
A data storage element (and method of forming the same) includes a substrate comprising a semiconductor material, a metal oxide layer including an electrically insulating rare earth metal oxide disposed upon a surface of the substrate, a conductive material disposed upon the metal oxide layer, a first electrode electrically connected to the conductive material, and a second electrode connected to the substrate.

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Chon et al. “Fatigue free samarium-modified bismuth titanate film capacitors having large spontaneous polarizations”, November Applied Physics Letters, vol. 79 No. 10 pp. 3137-3139.

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