Rapid thermal oxide passivated solar cell with improved...

Details Rapid thermal oxide passivated solar cell with improved... Rapid thermal oxide passivated solar cell with improved...

2008-07-17

2010-11-23

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S508000, C438S475000, C438S769000, C257SE21042, C257SE21077, C257SE21079, C257SE21227, C257SE21229, C257SE21267, C257SE21278, C257SE21311

Reexamination Certificate

active

07838400

ABSTRACT:
A method of manufacturing a solar cell is provided. One surface of a semiconductor substrate is doped with a n-type dopant. The substrate is then subjected to a thermal oxidation process to form an oxide layer on one or both surfaces of the substrate. The thermal process also diffuses the dopant into the substrate, smoothing the concentration profile. The smoothed concentration gradient enables the oxide layer to act as a passivating layer. Anti-reflective coatings may be applied over the oxide layers, and a reflective layer may be applied on the surface opposite the doped surface to complete the solar cell.

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B. Hartiti, et al., Towards High-efficiency Silicon Solar Cells by Rapid Thermal Processing, Progress in Photovoltaics: Research and Applications, vol. 2, pp. 129-142 (1994).

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