Rapid thermal chemical vapor deposition procedure for a self ali

Details Rapid thermal chemical vapor deposition procedure for a self ali Rapid thermal chemical vapor deposition procedure for a self ali

1997-03-09

1998-06-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438381, 438382, 438385, 438660, H01L 218238

Patent

active

057633037

ABSTRACT:
A process for fabricating MOSFET devices, for a SRAM cell, using a polycide contact structure, self-aligned to an underlying source and drain region, has been developed. This process features the use of a RTCVD procedure, featuring loading of wafers, as well as evacuation procedures, both performed at room temperature, in a first RTCVD chamber, followed by the deposition of polysilicon and tungsten silicide layers, performed in the same RTCVD chamber. The in situ, room temperature load and evacuation processes, followed by polysilicon and tungsten depositions, results in polycide interfaces with minimal levels of native oxide, thus improving device characteristics, and SRAM performance.

REFERENCES:
patent: 4796562 (1989-01-01), Brors et al.
patent: 5461006 (1995-10-01), Mehra
patent: 5510296 (1996-04-01), Yen et al.
patent: 5652181 (1997-07-01), Thakur

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