Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2006-10-17
2006-10-17
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S230030
Reexamination Certificate
active
07123521
ABSTRACT:
A non-volatile memory is described that utilizes a cache read mode of operation, where a next page of memory is being read/sensed from the memory array by the sense amplifiers while a previously read page of memory is being read from the memory I/O buffer, wherein the next page is user selected. This random cache read mode allows for a memory with a random page read capability, in which the address of the next page of data to be read is user selectable, which benefits from the low latency of a cache read mode of operation due to concurrent data sensing and data I/O.
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Han Jin-Man
Louie Benjamin
Wan Yunqiu
Yip Aaron
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Phung Anh
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