Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-02-08
2010-11-23
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000
Reexamination Certificate
active
07838932
ABSTRACT:
An embedded silicon carbon (Si:C) having a substitutional carbon content in excess of one percent in order to effectively increase electron mobility by application of tension to a channel region of an NFET is achieved by overfilling a gap or trench formed by transistor gate structures with Si:C and polishing an etching the Si:C to or below a surface of a raised gate structure in a super-Damascene process, leaving Si:C only in selected regions above the transistor source and drain, even though processes capable of depositing Si:C with sufficiently high substitutional carbon content are inherently non-selective.
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Chakravarti Ashima B.
Chidambarrao Dureseti
Holt Judson R.
Liu Yaocheng
Rim Kern
Abate Joseph P.
International Business Machines - Corporation
Le Thao P.
Whitham Curtis Christofferson & Cook, P.C.
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