Radical processing of a sub-nanometer insulation film

Details Radical processing of a sub-nanometer insulation film Radical processing of a sub-nanometer insulation film

2005-08-09

2005-08-09

Tran, Michael (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S246000, C438S255000, C438S353000, C438S361000, C438S386000, C257S296000, C257S301000, C257S309000

Reexamination Certificate

active

06927112

ABSTRACT:
A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.

REFERENCES:
patent: 4732871 (1988-03-01), Buchmann et al.
patent: 5965034 (1999-10-01), Vinogradov et al.
patent: 6017221 (2000-01-01), Flamm
patent: 6127275 (2000-10-01), Flamm
patent: 6168980 (2001-01-01), Yamazaki et al.
patent: 6365467 (2002-04-01), Joo
patent: 6459126 (2002-10-01), Mogami et al.
patent: 6723611 (2004-04-01), Akatsu et al.
patent: 2001/0025999 (2001-10-01), Suguro
patent: 2002/0073925 (2002-06-01), Noble et al.
patent: 2002/0090776 (2002-07-01), Nakata et al.
patent: 0973189 (1999-07-01), None
patent: 07-196303 (1995-08-01), None
patent: 08-085861 (1996-04-01), None
patent: 11121452 (1999-04-01), None
patent: 2000195856 (2000-07-01), None
patent: 2001023976 (2001-01-01), None
patent: 2001085427 (2001-03-01), None
patent: 2001185548 (2001-07-01), None
patent: 2001217415 (2001-08-01), None
patent: 2002-100627 (2002-04-01), None
patent: 2002184773 (2002-06-01), None
patent: 00/65631 (2000-11-01), None
patent: 02/15243 (2002-02-01), None
G. Lucovsky, “Bonding constraints and defect formation in interfaces between crystalline silicon and advanced single layer and composite gate dielectrics” Applied Physics Letters, vol. 74, No. 14, Apr. 5, 1999, pp. 2005-2007.
Koji Watanabe, et al., “Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals” Journal of Applied Physics, vol. 90, No. 9, Nov. 1, 2001, pp. 4701-4707.
Z. H. Lu, et al., “SiO2film thickness metrology by x-ray photoelectron spectroscopy” Applied Physics Letters, vol. 71, No. 19, Nov. 10, 1997.

Affiliated with

Also associated with

Rating

Radical processing of a sub-nanometer insulation film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radical processing of a sub-nanometer insulation film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radical processing of a sub-nanometer insulation film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3504482