Quantum wire gate device and method of making same

Details Quantum wire gate device and method of making same Quantum wire gate device and method of making same

2005-04-12

2008-10-14

Wilczaewski, M. (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S282000, C438S303000, C438S533000, C438S156000, C438S962000

Reexamination Certificate

active

07435637

ABSTRACT:
The present invention relates to a method of forming a quantum wire gate device. The method includes patterning a first oxide upon a substrate. Preferably the first oxide pattern is precisely and uniformly spaced to maximize quantum wire numbers per unit area. The method continues by forming a first nitride spacer mask upon the first oxide and by forming a first oxide spacer mask upon the first nitride spacer mask. Thereafter, the method continues by forming a second nitride spacer mask upon the first oxide spacer mask and by forming a plurality of channels in the substrate that are aligned to the second nitride spacer mask. A dielectric is formed upon the channel length and the method continues by forming a gate layer over the plurality of channels. Because of the inventive method and the starting scale, each of the plurality of channels is narrower than the mean free path of semiconductive electron flow therein.

REFERENCES:
patent: 5529952 (1996-06-01), Smith et al.
patent: 5612255 (1997-03-01), Chapple-Sokol et al.
patent: 5828076 (1998-10-01), Gossner et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6399502 (2002-06-01), Hernandez et al.
patent: 6967140 (2005-11-01), Doyle
patent: 7183597 (2007-02-01), Doyle
patent: 2003/0006410 (2003-01-01), Doyle
patent: 2005/0158959 (2005-07-01), Doyle
patent: 2005/0215040 (2005-09-01), Doyle
Kendall, D.L. “Far Beyond Microelectronics with Silicon”, The Norbert J. Kreidl Memorial Lecture, Holiday Inn Midtown, Oct. 30, 1995, section meeting MRS, ECS and RCS.

Affiliated with

Also associated with

Rating

Quantum wire gate device and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Quantum wire gate device and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum wire gate device and method of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3996021