Magnetoresistive sensor with antiferromagnetic...

Details Magnetoresistive sensor with antiferromagnetic... Magnetoresistive sensor with antiferromagnetic...

2006-02-16

2008-10-07

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07433162

ABSTRACT:
An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an enhancement layer formed of a chemically-ordered tetragonal-crystalline alloy, a chemically-ordered tetragonal-crystalline Mn-alloy antiferromagnetic layer in contact with the enhancement layer, and a ferromagnetic layer exchange-coupled with the antiferromagnetic layer. The enhancement layer is an alloy selected from the group consisting of alloys of AuCu, FePt, FePd, AgTi3, Pt Zn, PdZn, IrV, CoPt and PdCd, and the antiferromagnetic layer is an alloy of Mn with Pt, Ni, Ir, Pd or Rh. The enhancement layer enhances the transformation of the Mn alloy from the chemically-disordered phase to the chemically-ordered phase.

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A. Tanaka et al., “Spin-valve heads in the current-perpendicular-to-plane mode for ultrahigh-density recording”, IEEE Transactions on Magnetics, 38 (1): 84-88 Part 1 Jan. 2002.

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