Profile of flash memory cells

Details Profile of flash memory cells Profile of flash memory cells

2011-04-19

2011-04-19

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27103

Reexamination Certificate

active

07928499

ABSTRACT:
A semiconductor structure includes a semiconductor substrate; a tunneling layer on the semiconductor substrate; a source region adjacent the tunneling layer; and a floating gate on the tunneling layer. The floating gate comprises a first edge having an upper portion and a lower portion, wherein the lower portion is recessed from the upper portion. The semiconductor structure further includes a blocking layer on the floating gate, wherein the blocking layer has a first edge facing a same direction as the first edge of the floating gate.

REFERENCES:
patent: 5847427 (1998-12-01), Hagiwara
patent: 6114723 (2000-09-01), Leu
patent: 6259131 (2001-07-01), Sung et al.
patent: 6403419 (2002-06-01), Kim et al.
patent: 6693009 (2004-02-01), Kim et al.
patent: 6894343 (2005-05-01), Harari et al.
patent: 2002/0008277 (2002-01-01), Chen
patent: 2004/0065917 (2004-04-01), Fan et al.
patent: 2004/0238881 (2004-12-01), Ozawa
patent: 2005/0012140 (2005-01-01), Shin et al.
patent: 2006/0120194 (2006-06-01), Shin et al.
patent: 2007/0122968 (2007-05-01), Sim et al.
patent: 2007/0278531 (2007-12-01), Choi et al.
patent: 2008/0073689 (2008-03-01), Wang et al.
patent: 2008/0308858 (2008-12-01), Sandhu et al.

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