Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-06
2006-06-06
Wilson, Christian D. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S263000, C438S264000, C438S494000, C438S493000, C438S586000, C438S166000, C438S149000, C438S151000, C438S118000, C438S106000, C438S478000, C438S458000, C438S507000, C438S479000, C257S347000, C257S350000
Reexamination Certificate
active
07056789
ABSTRACT:
The present invention relates to a semiconductor substrate production method, field effect transistor production method, semiconductor substrate and field effect transistor which, together with having low penetrating dislocation density and low surface roughness, prevent worsening of surface and interface roughness during heat treatment of a device production process and so forth. A production method of a semiconductor substrate W, in which SiGe layers2and3are formed on an Si substrate1, is comprised of a heat treatment step in which heat treatment is performed either during or after the formation of the SiGe layers by epitaxial growth, at a temperature that exceeds the temperature of the epitaxial growth, and a polishing step in which irregularities in the surface formed during the heat treatment are removed by polishing following formation of the SiGe layers.
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Mizushima Kazuki
Shiono Ichiro
Yamaguchi Kenji
Pillsbury Winthrop Shaw & Pittman LLP
Sumitomo Mitsubishi Silicon Corporation
Wilson Christian D.
Yevsikov Victor V.
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