Process used in an RF coupled plasma reactor

Details Process used in an RF coupled plasma reactor Process used in an RF coupled plasma reactor

1993-04-01

2000-05-30

Utech, Benjamin

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 71, 156345, 118723I, B44C 122, B28B 102

Patent

active

060687843

ABSTRACT:
A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

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