Process to integrate a self-aligned contact structure, with a ca

Details Process to integrate a self-aligned contact structure, with a ca Process to integrate a self-aligned contact structure, with a ca

1997-05-05

1998-03-24

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438239, 438253, 438637, H01L 218242

Patent

active

057312362

ABSTRACT:
A semiconductor fabrication process, allowing integration of MOSFET devices, and capacitor structures, on a single semiconductor chip, has been developed. The process integration features the use of a MOSFET device, fabricated using a self-aligned contact structure, allowing a reduction in the source and drain area needed for contact. Silicon nitride spacers, used on the sides of the polysilicon gate electrode, protect the polysilicon gate structure, during the opening of a self-aligned contact hole. A self-aligned contact opening, to a source and drain region of a MOSFET device, as well as a capacitor contact opening, to a capacitor structure, are formed using wet-dry etching combinations. These etching combinations result in openings exhibiting sloped profiles, allowing for the attainment of reliable metal coverage, even with the use of sputtered metal depositions.

REFERENCES:
patent: 5075246 (1991-12-01), Re et al.
patent: 5173437 (1992-12-01), Chi
patent: 5286667 (1994-02-01), Lin et al.
patent: 5304829 (1994-04-01), Mori et al.
patent: 5318925 (1994-06-01), Kim
patent: 5364804 (1994-11-01), Ho et al.
patent: 5397722 (1995-03-01), Bashir et al.

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