Process to fabricate stacked capacitor DRAM and low power thin f

Details Process to fabricate stacked capacitor DRAM and low power thin f Process to fabricate stacked capacitor DRAM and low power thin f

1996-03-28

1998-02-10

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438253, H01L 218242

Patent

active

057168814

ABSTRACT:
A fabrication process for integrating stacked capacitor, DRAM devices, and thin film transistor, SRAM devices, has been developed. The fabrication process features combining key operations used to create transfer gate transistor structures, and access transistor structures for the DRAM and SRAM devices. In addition, process steps, used to create a capacitor structure, for the DRAM device, and a thin film transistor structure, for the SRAM device, are also shared. Another key feature of this invention is a buried contact structure, used for the SRAM device.

REFERENCES:
patent: 5066602 (1991-11-01), Takemoto et al.
patent: 5187122 (1993-02-01), Bonis
patent: 5340762 (1994-08-01), Vora
patent: 5389568 (1995-02-01), Yun
patent: 5525552 (1996-06-01), Huang

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