Process to fabricate a cylindrical, capacitor structure under a

Details Process to fabricate a cylindrical, capacitor structure under a Process to fabricate a cylindrical, capacitor structure under a

1998-06-08

2000-12-26

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438397, 438254, H01L 218242

Patent

active

061658391

ABSTRACT:
A process for forming a DRAM, cylindrical shaped, stacked capacitor structure, located under a bit line structure, has been developed. The process features defining a polysilicon cell plate structure, during the same photolithotgraphic and anisotropic etching procedures, used to open a bit line contact hole. The bit line contact hole is formed by first opening a top portion of the bit line contact hole, using a photoresist shape as an etch mask, and after the formation of silicon nitride spacers, on the sides of the top portion of the bit line contact hole, the bottom portion of the bit line contact hole is opened, using silicon nitride as an etch mask.

REFERENCES:
patent: 5206183 (1993-04-01), Dennison
patent: 5292677 (1994-03-01), Dennison
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5401681 (1995-03-01), Dennison
patent: 5498562 (1996-03-01), Dennison et al.
patent: 5500384 (1996-03-01), Melzner
patent: 5563089 (1996-10-01), Jost et al.
patent: 5605857 (1997-02-01), Jost et al.
patent: 5648291 (1997-07-01), Sung
patent: 5668038 (1997-09-01), Huang et al.
patent: 5770498 (1998-06-01), Becker
patent: 5776815 (1998-07-01), Pan et al.
patent: 5792688 (1998-08-01), Tseng
patent: 5866453 (1999-02-01), Prall et al.
patent: 5955758 (1999-09-01), Sandhu et al.
patent: 6008085 (1999-12-01), Sung et al.

Affiliated with

Also associated with

Rating

Process to fabricate a cylindrical, capacitor structure under a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process to fabricate a cylindrical, capacitor structure under a , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process to fabricate a cylindrical, capacitor structure under a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-993987