Process sequence for photoresist stripping and/or cleaning...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – For liquid etchant

Reexamination Certificate

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C156S345150, C156S345170, C156S345180, C156S345290

Reexamination Certificate

active

10909764

ABSTRACT:
A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

REFERENCES:
patent: 2002/0011254 (2002-01-01), Puri et al.
patent: 2002/0157666 (2002-10-01), Kenney et al.
patent: 2003/0045098 (2003-03-01), Verhaverbeke et al.
patent: 2003/0172954 (2003-09-01), Verhaverbeke
patent: 2004/0139985 (2004-07-01), Hegedus et al.
patent: 2004/0154641 (2004-08-01), Montierth
patent: 2002/0221877 (2004-11-01), Bergman
patent: 2004/0221877 (2004-11-01), Bergman

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