Process sequence for doped silicon fill of deep trenches

Details Process sequence for doped silicon fill of deep trenches Process sequence for doped silicon fill of deep trenches

2006-09-19

2006-09-19

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S243000, C438S386000, C257SE21008, C257S137000

Reexamination Certificate

active

07109097

ABSTRACT:
A method for void free filling with in-situ doped amorphous silicon of a deep trench structure is provided in which a first fill is carried out in at a temperature, pressure and dopant to silane ratio such that film deposition occurs from the bottom of the trench upwards. By way of this first fill, step coverages well in excess 100% are achieved. In the second fill step, deposition is carried out under changed conditions so as to reduce the impact of dopant on deposition rate, whereby trench fill is completed at a deposition rate which exceeds the deposition rate of the first fill. In an application of this method to the formation of deep trench capacitor structures, the intermediate steps further including the capping of the void free filled trench with a thick layer of amorphous silicon, planarization of the wafer thereafter, followed by a thermal anneal to re-distribute the dopant within the filled trench. Thereafter, additional steps can be performed to complete the formation of the capacitor structure.

REFERENCES:
patent: 5198387 (1993-03-01), Tang
patent: 5256566 (1993-10-01), Bailey
patent: 6352593 (2002-03-01), Brors et al.
patent: 6677218 (2004-01-01), Kirchhoff et al.
patent: 6815077 (2004-11-01), Herner et al.
patent: 6919255 (2005-07-01), Birner et al.
patent: 2003/0049372 (2003-03-01), Cook et al.
Clemens Heitzinger et al. “Simulation of ArsenicIn SituDoping with Polysilicon CVD and its Application to High Aspect Ratio Trenches.”IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. Mar. 2003 vol. 22(3): 285-292.

Affiliated with

Also associated with

Rating

Process sequence for doped silicon fill of deep trenches does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process sequence for doped silicon fill of deep trenches, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process sequence for doped silicon fill of deep trenches will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3612251