Process related deviation corrected parasitic capacitance...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

07028277

ABSTRACT:
Each of a method for determining a parasitic capacitance and an apparatus for determining the parasitic capacitance provides for an experimental correlation within a parasitic capacitance model of a series of conductor layer nominal dimensions and spacings with a process related deviation to provide a series of conductor layer actual dimensions and spacings. The method and the apparatus further provide for determining the parasitic capacitance while employing the conductor layer actual dimensions and spacings. The parasitic capacitance is thus determined with enhanced accuracy.

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