Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1998-06-18
2000-05-30
Smith, Matthew
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438683, 438653, 438656, 4272557, 4272552, H01L 2131
Patent
active
060690933
ABSTRACT:
In a process of forming a metal film, when metal wiring is formed on a diffusion layer (an electrode, etc.) of a circuit element formed on a silicon semiconductor wafer, a Ti film is deposited on a surface of a processed body by PECVD using TiCl.sub.4 gas and H.sub.2 gas as material gas. A Ti--Si--N film is formed on the diffusion layer surface by adding N.sub.2 gas to the material gas, and the Ti film is formed subsequently on the Ti--Si--N film. The Ti--Si--N film suppresses diffusion of silicon from the semiconductor wafer side.
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Tada Kunihiro
Wakabayashi Satoshi
Hullinger Robert A.
Smith Matthew
Tokyo Electron Limited
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