Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2011-06-28
2011-06-28
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S071000, C438S709000, C438S725000, C438S730000, C438S731000
Reexamination Certificate
active
07967996
ABSTRACT:
A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.
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Balakrishna Ajit
Collins Kenneth S.
Hanawa Hiroji
Merry Walter R.
Nguyen Andrew
Applied Materials Inc.
Tran Binh X
Wallace Robert M.
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