Process for the vapor growth of a thin film

Details Process for the vapor growth of a thin film Process for the vapor growth of a thin film

1977-04-14

1979-12-18

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, B01J 1726

Patent

active

041793269

ABSTRACT:
Disclosed herewith is an improvement of the conventional process for the vapor growth of a thin film, such as the films of SiO.sub.2, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and polycrystalline Si, on a plurality of wafers, such as wafers of a semiconductor, under a reduced pressure. This improved process allows the growing of a uniformly thin film on each piece of wafer. According to the present invention, the location of the wafers is changed in accordance with a specific pressure within the reaction tube.

REFERENCES:
patent: 3657004 (1972-04-01), Merkel et al.
patent: 3922467 (1975-11-01), Pinchon
patent: 4018183 (1977-04-01), Meuleman

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