Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-02-16
1991-06-04
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156644, 156646, 156657, 1566591, 20419237, 252 791, 437238, B44C 122, C03C 1500, C03C 2506
Patent
active
050211218
ABSTRACT:
An improved RIE process is disclosed for etching one or more openings in a layer of an oxide of silicon on a semiconductor wafer characterized by a contact angle of at least 80.degree., with respect to the plane of the oxide layer, and highly selective to silicon which comprises flowing an inert gas and CHF.sub.3 into an RIE chamber while maintaining respective gas flows within a range of from about 15 to about 185 sccm of inert gas and from about 15 to about 60 sccm of CHF.sub.3, with a total gas flow not exceeding about 200 sccm, and a ratio of inert gas to CHF.sub.3 ranging from about 1:1 to about 10:1. A plasma is maintained in the RIE chamber during the gas flow at a power level within a range of from about 400 to about 1000 watts. In a preferred embodiment, CF.sub.4 gas is also flowed into the RIE chamber within a range of from about 1 to about 10 sccm to control the selectivity of the etch to silicon, and the wafer is immersed in a magnetic field of 1 to 120 gauss during the etching process.
REFERENCES:
patent: 4511430 (1985-04-01), Chen et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4680087 (1987-07-01), Bobbio
patent: 4698128 (1987-10-01), Berglund et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4904341 (1990-02-01), Blaugher et al.
Roth et al., "In Situ, Tapered Contacts Etch", Extended Abstract (Electrochemical Society, Inc.), vol. 87-2, Sep. 1, 1987.
Groechel David W.
Henri John R.
Obinata Naomi
Taylor Brad
Applied Materials Inc.
Hickman Paul L.
Powell William A.
Taylor John P.
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