Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-10-17
2006-10-17
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S754000, C438S745000, C438S134000, C438S687000, C438S789000, C438S790000, C438S778000, C257SE21492
Reexamination Certificate
active
07122484
ABSTRACT:
A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.
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Chan Bor-Wen
Hsu Lawrance
Hsu Peng-Fu
Huang Jun-Lung
Huang Yi-Chen
Ahmadi Mohsen
Lebentritt Michael
Taiwan Semiconductor Manufacturing Company , Ltd.
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