Process for removing etching residues, etching mask and silicon

Details Process for removing etching residues, etching mask and silicon Process for removing etching residues, etching mask and silicon

1997-11-13

2000-03-07

Krynski, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438757, 438906, 438963, 216 99, 252 793, 252 794, 134 13, 134902, H01L 21302

Patent

active

060339969

ABSTRACT:
Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.

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