Process for reducing defects in oxide layers on silicon carbide

Details Process for reducing defects in oxide layers on silicon carbide Process for reducing defects in oxide layers on silicon carbide

1995-11-08

1999-10-26

Chang, Ceila

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438931, 257 77, H01L 310312, H01L 2120

Patent

active

059728019

ABSTRACT:
A method is disclosed for obtaining improved oxide layers and resulting improved performance from oxide based devices. The method comprises exposing an oxide layer on a silicon carbide layer to an oxidizing source gas at a temperature below the temperature at which SiC would begin to oxidize at a significant rate, while high enough to enable the oxidizing source gas to diffuse into the oxide layer, and while avoiding any substantial additional oxidation of the silicon carbide, and for a time sufficient to densify the oxide layer and improve the interface between the oxide layer and the silicon carbide layer.

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