Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1997-12-22
2000-03-07
Green, Anthony
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
438694, 438695, 438703, 438710, 438720, 438722, 438759, H01L 2100
Patent
active
06033584&
ABSTRACT:
A method of integrated circuit fabrication creating copper interconnect structures wherein the formation of copper oxide is reduced or eliminated by etching away the copper oxide performing an H.sub.2 plasma treatment in a plasma enhanced chemical vapor deposition chamber.
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Morales Guarionex
Ngo Minh Van
Nogami Takeshi
Advanced Micro Devices , Inc.
Green Anthony
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