Process for reducing copper oxide during integrated circuit fabr

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

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438694, 438695, 438703, 438710, 438720, 438722, 438759, H01L 2100

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06033584&

ABSTRACT:
A method of integrated circuit fabrication creating copper interconnect structures wherein the formation of copper oxide is reduced or eliminated by etching away the copper oxide performing an H.sub.2 plasma treatment in a plasma enhanced chemical vapor deposition chamber.

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