Process for integrating a MOSFET device, using silicon nitride s

Details Process for integrating a MOSFET device, using silicon nitride s Process for integrating a MOSFET device, using silicon nitride s

1997-04-11

1998-06-16

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438595, H01L 218242

Patent

active

057669929

ABSTRACT:
A semiconductor fabrication process, allowing integration of MOSFET devices, and capacitor structures, on a single semiconductor chip, has been developed. The process integration features the use of a MOSFET device, fabricated using a self-aligned contact structure, allowing a reduction in the source and drain area needed for contact. Silicon nitride spacers, used on the sides of the polysilicon gate electrode, protect the polysilicon gate structure, during the opening of a self-aligned contact hole.

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