Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-07-11
2006-07-11
Mullis, Jeffrey (Department: 1711)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S795000, C525S274000, C528S025000, C528S480000, C528S483000, C528S488000
Reexamination Certificate
active
07074727
ABSTRACT:
Low-k organosilicate dielectric material can be exposed to a series of reagents, including a halogenation reagent, an alkylation reagent, and a termination reagent, in order to reverse degradation of dielectric properties caused by previous processing steps.
REFERENCES:
patent: 4921321 (1990-05-01), Weidman
patent: 5468890 (1995-11-01), Herzig et al.
patent: 6346490 (2002-02-01), Catabay et al.
Grant and Hackh's Chemical Dictionary,Donnely Sons Company, 1987, p. 304.
Yang, S., et al., “Processing and Characterization of Ultralow-Dielectric Constant Organosilicate,” J. Vac. Sci. Technol. B, vol. 19, No. 6 (Nov./Dec. 2001) pp. 2155-2161.
Terry, J., et al., “Alkyl-terminated Si(111) Surfaces: A High-Resolution, Core Level Photoelectron Spectroscopy Study,” Journal of Applied Physics, vol. 85, No. 1 (Jan. 1, 1999) pp. 213-221.
Chang, T.C., et al., “Eliminating Dielectric Degradation of Low-k Organosilicate Glass by Trimethylchlorosilane Treatment,” J.Vac. Sci. Technol. B., vol. 20, No. 4 (Jul./Aug. 2002) pp. 1561-1566.
Chang, T.C., et al., “Trimethylchlorosilane Treatment of Ultralow Dielectric Constant Material After Photoresist Removal Processing,” Journal Of The Electrochemical Society, vol. 149, No. 10 (Aug. 2002) pp. F145-F148.
Mor, Y.S., et al., “Effective Repair to Ultra-Low-k Dielectric Material (k˜2.0) by Hexamethldisilazane Treatment,” J. Vac. Sci. Technol. B, vol. 20, No. 4 (Jul./Aug. 2002) pp. 1334-1338.
Chang, T.C., et al., “Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane During the Photoresist Removal Process,” Journal Of The Electrochemical Society, vol. 149, No. 8 (Jun. 2002) pp. F81-F84.
Liu, P., et al., “Highly Reliable Chemical-Mechanical Polishing Process for Organic Low-k Methylsilsesquioxane,” J. Vac. Sci. Technol. B, vol. 19, No. 4 (Jul./Aug. 2001) pp. 1212-1218.
Wolf, S., “Silicon Processing for the VLSI Era,” vol. 4, Lattice Press, Sunset Beach, California (2002) pp. 639-670.
Chiu Yuan-Hung
Hsu Peng-Fu
Lu Yung-Cheng
Shieh Jyu-Horng
Tao Hun-Jan
Mullis Jeffrey
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Process for improving dielectric properties in low-k... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for improving dielectric properties in low-k..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for improving dielectric properties in low-k... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3531783