Process for forming self-aligned source in flash cell using SiN

Details Process for forming self-aligned source in flash cell using SiN Process for forming self-aligned source in flash cell using SiN

1999-04-01

1999-12-14

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438296, 438597, 438682, H01L 2128, H01L 218239

Patent

active

060016876

ABSTRACT:
When FLASH cells are made in association with STI (as opposed to LOCOS) it is often the case that stringers of silicon nitride are left behind after the spacers have been formed. This problem has been eliminated by requiring that the oxide in the STI trenches remain in place at the time that the silicon nitride spacers are formed. After that, the oxide is removed in the usual manner, following which a SALICIDE process is used to form a self aligned source line. When this sequence is followed no stringers are left behind on the walls of the trench, guaranteeing the absence of any open circuits or high resistance regions in the source line.

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Watanabe, H., et al., "Novel 0.44.mu.m.sup.2 Ti-Salicide STI Cell Technology for High-Density NOR FLash Memories and High Performance Embedded Application", IEEE IEDM Tech. Digest, Dec. 1998, pp. 975-978.

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